Condition Monitoring Approach of a SiC Power Semiconductor using Turn-Off Delay with an Integration in a SiC Driver

被引：0

作者：

Golev, Victor ^{[1
]}

Schuemann, Ulf ^{[1
]}

Rassmann, Rando ^{[1
]}

Bockholt, Jan ^{[1
]}

机构：

[1] Univ Appl Sci Kiel, Kiel, Germany

来源：

2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE) | 2022年

关键词：

Condition Monitoring; Silicon Carbide (SiC); Smart Gate Drivers; Intelligent Gate Driver; Driver Concepts;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper deals with a condition monitoring approach based on the turn-off delay measurement and its integration in a SiC driver to measure the temperature-sensitive parameters in a continuous switching operation of a SiC power semiconductor. The presented approach requires a small area for integration and can be implemented with little effort.

引用

页数：8

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[Anonymous], 2020, MEASUREMENT TEMPERAT

[2]

[Anonymous], 2017, ENERGIES

[3]

[Anonymous], 2011, IEEE T IND ELECTRON, V58, P4931

[4]

[Anonymous], 2016, 8 IET INT C POW EL M

[5]