Condition Monitoring Approach of a SiC Power Semiconductor using Turn-Off Delay with an Integration in a SiC Driver

被引：0
作者：
Golev, Victor [1 ]
Schuemann, Ulf [1 ]
Rassmann, Rando [1 ]
Bockholt, Jan [1 ]
机构：
[1] Univ Appl Sci Kiel, Kiel, Germany
来源：
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE) | 2022年
关键词：
Condition Monitoring; Silicon Carbide (SiC); Smart Gate Drivers; Intelligent Gate Driver; Driver Concepts;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper deals with a condition monitoring approach based on the turn-off delay measurement and its integration in a SiC driver to measure the temperature-sensitive parameters in a continuous switching operation of a SiC power semiconductor. The presented approach requires a small area for integration and can be implemented with little effort.
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页数：8
相关论文
共 11 条
  • [1] [Anonymous], 2020, MEASUREMENT TEMPERAT
  • [2] [Anonymous], 2017, ENERGIES
  • [3] [Anonymous], 2011, IEEE T IND ELECTRON, V58, P4931
  • [4] [Anonymous], 2016, 8 IET INT C POW EL M
  • [5] Baker N., 2013, IECON C VIENN
  • [6] Ghaisas G., 2021, CRITICAL REV PERSPEC
  • [7] Condition monitoring techniques for electrical equipment - A literature survey
    Han, Y
    Song, YH
    [J]. IEEE TRANSACTIONS ON POWER DELIVERY, 2003, 18 (01) : 4 - 13
  • [8] Texas Instruments, 2019, DAT TDC7200 TIM TO D
  • [9] A 120 °C Ambient Temperature Forced Air-Cooled Normally-off SiC JFET Automotive Inverter System
    Wrzecionko, Benjamin
    Bortis, Dominik
    Kolar, Johann W.
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) : 2345 - 2358
  • [10] Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
    Yang, Shaoyong
    Xiang, Dawei
    Bryant, Angus
    Mawby, Philip
    Ran, Li
    Tavner, Peter
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2010, 25 (11) : 2734 - 2752
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