A model of the 1/f noise in a forward-biased p-n diode

被引:1
作者
Dmitriev, A. P. [1 ]
Levinshtein, M. E. [1 ]
Kolesnikova, E. N. [1 ]
Palmour, J. W. [2 ]
Das, M. K. [2 ]
Hull, B. A. [2 ]
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Cree Inc, Durham, NC 27703 USA
关键词
D O I
10.1088/0268-1242/23/1/015011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A model of 1/f noise in forward-biased p-n junction is suggested. The theory links current fluctuations to fluctuations of level occupancy in the density-of-states tail in the space charge region. The model is valid at forward biases for which the recombination current predominates. The 1/f (and 1/f-like) noise appears if the capture cross section of levels in the density-of-states tail decreases exponentially as the distance between a band edge and a level in the energy gap increases (multiphonon capture model). Analytical estimates for the frequency and current dependences of the 1/f noise are obtained.
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页数:5
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