A model of the 1/f noise in a forward-biased p-n diode

被引：1

作者：

Dmitriev, A. P. ^{[1
]}

Levinshtein, M. E. ^{[1
]}

Kolesnikova, E. N. ^{[1
]}

Palmour, J. W. ^{[2
]}

Das, M. K. ^{[2
]}

Hull, B. A. ^{[2
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Cree Inc, Durham, NC 27703 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 01期

关键词：

D O I：

10.1088/0268-1242/23/1/015011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model of 1/f noise in forward-biased p-n junction is suggested. The theory links current fluctuations to fluctuations of level occupancy in the density-of-states tail in the space charge region. The model is valid at forward biases for which the recombination current predominates. The 1/f (and 1/f-like) noise appears if the capture cross section of levels in the density-of-states tail decreases exponentially as the distance between a band edge and a level in the energy gap increases (multiphonon capture model). Analytical estimates for the frequency and current dependences of the 1/f noise are obtained.

引用

页数：5

共 15 条

[1]

ABAKMOV VN, 1991, NONRADIATIVE RECOMBI, V33

[2] Electrical and low frequency noise properties of 4H-SiC p+-n-n+ junction diodes [J].

Arpatzanis, N. ;

Tsormpatzoglou, A. ;

Dimitriadis, C. A. ;

Zekentes, K. ;

Camara, N. ;

Godlewski, M. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (10) :2551-2557

[3] Experimental investigation of noise in 4H-SiC p+-n-n+ junctions [J].

Arpatzanis, N. ;

Tassis, D. R. ;

Dimitriadis, C. A. ;

Zekentes, K. ;

Camara, N. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (05) :591-593

[4] Low-frequency noise and charge transport in light-emitting diodes with quantum dots [J].

Dobrzanski, L .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) :4135-4142

[5]

DYAKONOVA NV, 1989, SOV PHYS SEMICOND+, V23, P175

[6]

DYAKONOVA NV, 1991, SOV PHYS SEMICOND+, V25, P1241

[7] EXPERIMENTAL STUDIES ON 1-F NOISE [J].

HOOGE, FN ;

KLEINPENNING, TGM ;

VANDAMME, LKJ .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532

[8] 1-F NOISE [J].

HOOGE, FN .

PHYSICA B & C, 1976, 83 (01) :14-23

[9] 1-F NOISE IN P-N DIODES [J].

KLEINPENNING, TGM .

PHYSICA B & C, 1980, 98 (04) :289-299

[10] Wide-band suppression of photon-number fluctuations in a high-speed light-emitting diode driven by a constant-current source [J].

Kobayashi, M ;

Kohno, M ;

Kadoya, Y ;

Yamanishi, M ;

Abe, J ;

Hirano, T .

APPLIED PHYSICS LETTERS, 1998, 72 (03) :284-286

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