Power scaling of narrow-linewidth 2μm GaSb-based semiconductor disk laser

被引：0
作者：
Kaspar, S. [1 ]
Rattunde, M. [1 ]
Adler, S. [1 ]
Toepper, T. [1 ]
Manz, C. [1 ]
Koehler, K. [1 ]
Wagner, J. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE AND INTERNATIONAL QUANTUM ELECTRONICS CONFERENCE (CLEO EUROPE/IQEC) | 2013年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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