Observation of bistable defects in electron irradiated n-type 4H-SiC

被引：3

作者：

Beyer, Franziska C. ^{[1
]}

Hemmingsson, Carl ^{[1
]}

Pedersen, Henrik ^{[1
]}

Henry, Anne ^{[1
]}

Isoya, Junichi ^{[2
]}

Morishita, Norio ^{[3
]}

Ohshima, Takeshi ^{[3
]}

Janzen, Erik ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58131 Linkoping, Sweden

[2] Univ Tsukuba, Grad Sch Lib Informat & Media Sci, Tsukuba, Ibaraki 3058850, Japan

[3] Japan Atom Energy Agcy, Gunma 3701292, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

metastable defects; bistability; electron irradiation; DLTS; METASTABLE DEFECTS; DEEP LEVELS;

D O I：

10.4028/www.scientific.net/MSF.679-680.249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A -> B and B -> A) take place above 700 degrees C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to E-A = 2.4 +/- 0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials.

引用

页码：249 / +

页数：2

共 50 条

[31] Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Omotoso, E.
Meyer, W. E.
Coelho, S. M. M.
Diale, M.
Ngoepe, P. N. M.
Auret, F. D.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 51 : 20 - 24
[32] Radiation Defects Created in n-Type 4H-SiC by Electron Irradiation in the Energy Range of 1-10 MeV
Hazdra, Pavel
Vobecky, Jan
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (17):
[33] Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
Kaneko, Hiromi
Kimoto, Tsunenobu
APPLIED PHYSICS LETTERS, 2011, 98 (26)
[34] Rectifying contacts to n-type 6H and 4H-SiC
Luckowski, ED
IsaacsSmith, T
Williams, JR
SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM, PTS 1-3: 1ST CONFERENCE ON FUTURE SCIENCE & EARTH SCIENCE MISSIONS; 1ST CONFERENCE ON SYNERGISTIC POWER & PROPULSION SYSTEMS TECHNOLOGY; 1ST CONFERENCE ON APPLICATIONS OF THERMOPHYSICS IN MICROGRAVITY; 2ND CONFERENCE ON COMMERCIAL DEVELOPMENT OF SPACE; - 2ND CONFERENCE ON NEXT GENERATION LAUNCH SYSTEMS; 14TH SYMPOSIUM ON SPACE NUCLEAR POWER AND PROPULSION, 1997, (387): : 851 - 856
[35] Emission Phenomenon Observation of Thermal Oxides Grown on n-type 4H-SiC (0001) wafer
Senzaki, Junji
Simozato, Atsushi
Koshikawa, Kazushige
Tanaka, Yasunori
Fukuda, Kenji
Okumura, Hajime
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 378 - +
[36] High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime
Zippelius, Bernd
Suda, Jun
Kimoto, Tsunenobu
JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)
[37] Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC
Weisse, Julietta
Csato, Constantin
Hauck, Martin
Erlekampf, Jurgen
Akhmadaliev, Shavkat
Rommel, Mathias
Mitlehner, Heinz
Rueb, Michael
Krieger, Michael
Bauer, Anton
Haeublein, Volker
Erlbacher, Tobias
Frey, Lothar
2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), 2018, : 66 - 69
[38] Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma
Ottaviani, L
Yakimov, E
Hidalgo, P
Martinuzzi, S
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 509 - 512
[39] Correlation between Thermal Oxide Breakdown and Defects in n-type 4H-SiC Epitaxial Wafers
Soloviev, Stanislav
Matocha, Kevin
Dunne, Greg
Stum, Zachary
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 775 - 778
[40] Distribution of the electrical resistivity of a n-type 4H-SiC crystal
Xie, Xinyu
Kong, Yafei
Xu, Lingmao
Yang, Deren
Pi, Xiaodong
JOURNAL OF CRYSTAL GROWTH, 2024, 648

← 1 2 3 4 5 →