Observation of bistable defects in electron irradiated n-type 4H-SiC

被引：3
|
作者：
Beyer, Franziska C. [1 ]
Hemmingsson, Carl [1 ]
Pedersen, Henrik [1 ]
Henry, Anne [1 ]
Isoya, Junichi [2 ]
Morishita, Norio [3 ]
Ohshima, Takeshi [3 ]
Janzen, Erik [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58131 Linkoping, Sweden
[2] Univ Tsukuba, Grad Sch Lib Informat & Media Sci, Tsukuba, Ibaraki 3058850, Japan
[3] Japan Atom Energy Agcy, Gunma 3701292, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷
关键词：
metastable defects; bistability; electron irradiation; DLTS; METASTABLE DEFECTS; DEEP LEVELS;
D O I：
10.4028/www.scientific.net/MSF.679-680.249
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A -> B and B -> A) take place above 700 degrees C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to E-A = 2.4 +/- 0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials.
引用
收藏
页码：249 / +
页数：2
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