Observation of bistable defects in electron irradiated n-type 4H-SiC

被引：3

作者：

Beyer, Franziska C. ^{[1
]}

Hemmingsson, Carl ^{[1
]}

Pedersen, Henrik ^{[1
]}

Henry, Anne ^{[1
]}

Isoya, Junichi ^{[2
]}

Morishita, Norio ^{[3
]}

Ohshima, Takeshi ^{[3
]}

Janzen, Erik ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58131 Linkoping, Sweden

[2] Univ Tsukuba, Grad Sch Lib Informat & Media Sci, Tsukuba, Ibaraki 3058850, Japan

[3] Japan Atom Energy Agcy, Gunma 3701292, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

metastable defects; bistability; electron irradiation; DLTS; METASTABLE DEFECTS; DEEP LEVELS;

D O I：

10.4028/www.scientific.net/MSF.679-680.249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A -> B and B -> A) take place above 700 degrees C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to E-A = 2.4 +/- 0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials.

引用

页码：249 / +

页数：2

共 8 条

[1] Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n-type 4H silicon carbide -: art. no. 043518
Alfieri, G
Monakhov, EV
Svensson, BG
Linnarsson, MK
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
[2] Bistable defects in low-energy electron irradiated n-type 4H-SiC
Beyer, F. C.
Hemmingsson, C. G.
Pedersen, H.
Henry, A.
Isoya, J.
Morishita, N.
Ohshima, T.
Janzen, E.
[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (8-9): : 227 - 229
[3] Deep levels in low-energy electron-irradiated 4H-SiC
Carlsson, P.
Son, N. T.
Beyer, F. C.
Pedersen, H.
Isoya, J.
Morishita, N.
Ohshima, T.
Janzen, E.
[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (04): : 121 - 123
[4] Metastable defects in 6H-SiC:: experiments and modeling
Hemmingsson, CG
Son, NT
Kordina, O
Janzén, E
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1324 - 1330
[5] Configuration transformation of metastable defects in 6H-SiC
Hemmingsson, CG
Son, NT
Kordina, O
Lindström, JL
Janzén, E
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) : 251 - 256
[6] Annealing study of a bistable defect in proton-implanted n-type 4H-SiC
Nielsen, HK
Martin, DM
Lévêque, P
Hallén, A
Svensson, BG
[J]. PHYSICA B-CONDENSED MATTER, 2003, 340 : 743 - 747
[7] Deep levels created by low energy electron irradiation in 4H-SiC
Storasta, L
Bergman, JP
Janzén, E
Henry, A
Lu, J
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 4909 - 4915
[8] Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation
von Bardeleben, HJ
Cantin, JL
Henry, L
Barthe, MF
[J]. PHYSICAL REVIEW B, 2000, 62 (16) : 10841 - 10846

← 1 →