Identification of Parameter Domain for the Design of High-Speed I/O Interface

被引：0

作者：

Kim, Seungwon ^{[1
]}

Kim, Youngmin ^{[2
]}

Han, Ki Jin ^{[1
]}

机构：

[1] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 44919, South Korea

[2] Kwangwoon Univ, Dept Comp Engn, Seoul 01897, South Korea

来源：

2015 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To construct design rules for high-speed I/O interfaces, a method to identify the domain of design parameters for given electrical specifications is proposed in this paper. Since the shape of parameter domain is arbitrary and difficult to describe accurately, we simplify the problem by considering cubic domains only. Each domain is tested whether it belongs to the original parameter domain by Monte-Carlo sampling, and the volume of the domain is maximized by an optimization algorithm. During the procedure, computational burden due to a large number of samplings is addressed by reusing previously sampled data. By applying the developed method to a typical memory I/O interface model, we show the proposed approach can provide a practical and quantitative guideline for high-speed channel design.

引用

页码：67 / 70

页数：4

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