Microstructure evolution of hydrogenated silicon thin films

被引:0
|
作者
Hwang, HL
Wang, KC
Hsu, KC
Yew, TR
Loferski, JJ
机构
[1] Department of Electrical Engineering, National Tsing Hua University, Hsinchu
[2] Brown University, Providence
来源
PROGRESS IN PHOTOVOLTAICS | 1996年 / 4卷 / 03期
关键词
D O I
10.1002/(SICI)1099-159X(199605/06)4:3<165::AID-PIP119>3.0.CO;2-M
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper describes the microstructure evolution of hydrogenated silicon films containing various amounts of hydrogen. Microcrystalline silicon films were produced when the hydrogen content of the films was adjusted by using the diluted hydrogen and hydrogen atom treatment methods, Polycrystalline silicon films having grain sizes in the micrometre range were deposited at low temperatures (250 degrees C) by electron cyclotron resonance chemical vapour deposition with the hydrogen dilution method. The microcrystalline and polycrystalline films were characterized by NMR, FTIR, Raman, X-ray and optical spectroscopy and electrical measurements. The results suggest the possibility of even larger grain silicon films suitable for high-performance solar cells which avoid the fundamental difficulties of amorphous Si:H solar cells.
引用
收藏
页码:165 / 192
页数:28
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