X-Ray Topography Characterization of the Bridgman-Grown Crystals of Zinc Germanium Phosphide

被引：2

作者：

Kaloyan, Alexander A. ^{[1
]}

Podurets, Konstantin M. ^{[1
]}

Prokhorov, Igor A. ^{[2
]}

Kovalenko, Ekaterina S. ^{[1
]}

Bezbakh, Ilya Zh. ^{[2
]}

Okunev, Aleksey O. ^{[3
]}

Gribenyukov, Alexander I. ^{[4
,5
]}

Verozubova, Galina A. ^{[4
]}

机构：

[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia

[2] Russian Acad Sci, Shubnikov Inst Crystallog, Fed Sci Res Ctr Crystallog & Photon, Moscow 119333, Russia

[3] Yaroslav The Wise Novgorod State Univ, Inst Elect & Informat Syst, Veliky Novgorod 173003, Russia

[4] Russian Acad Sci, Inst Monitoring Climat & Ecol Syst, Siberian Branch, Tomsk 634055, Russia

[5] Tomsk State Univ, Radiophys Fac, Tomsk 634050, Russia

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2018年 / 53卷 / 11期

关键词：

Bridgman technique; defects; nonlinear optic materials; rocking curve topography; X-ray topography; SEMICONDUCTOR CRYSTALS; SINGLE-CRYSTALS; DIFFRACTION; DEVICE; ZNGEP2;

D O I：

10.1002/crat.201800154

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Samples of the Bridgman-grown nonlinear optic crystal of ZnGeP2 are studied using the methods of topography on a laboratory source and on a synchrotron radiation source. Methods of quasi-plane-wave topography, white beam topography, and rocking curve topography are used. Dislocation bundles, growth striations, small-angle boundaries, and other defects are observed. The macroscopic distribution of defects in crystals and disorientations present in the crystal are studied. The mechanism of formation of images of growth striations is discussed. Digital analysis of the growth striations is carried out to characterize the growth process.

引用

页数：7

共 18 条

[11] NIH Image to ImageJ: 25 years of image analysis [J].

Schneider, Caroline A. ;

Rasband, Wayne S. ;

Eliceiri, Kevin W. .

NATURE METHODS, 2012, 9 (07) :671-675

[12] X-ray diffraction topography for materials science [J].

Shul'pina, I. L. ;

Prokhorov, I. A. .

CRYSTALLOGRAPHY REPORTS, 2012, 57 (05) :661-669

[13] Investigations into growth of semiconductor crystals with high micro homogeneity of properties under microgravity simulating conditions [J].

Strelov, VI ;

Zakharov, BG ;

Sidorov, VS ;

Ananyev, PA .

JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) :74-84

[14] A new high-sensitivity X-ray diffraction technique for determining local deformations of a crystal surface using "bending interference fringes" [J].

Suvorov, E. V. ;

Smirnova, I. A. .

TECHNICAL PHYSICS LETTERS, 2016, 42 (09) :955-958

[15] Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications [J].

Thu Nhi Tran Thi ;

Morse, J. ;

Caliste, D. ;

Fernandez, B. ;

Eon, D. ;

Hartwig, J. ;

Barbay, C. ;

Mer-Calfati, C. ;

Tranchant, N. ;

Arnault, J. C. ;

Lafford, T. A. ;

Baruchel, J. .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2017, 50 :561-569

[16] Growth and defect structure of ZnGeP2 crystals [J].

Verozubova, G. A. ;

Okunev, A. O. ;

Gribenyukov, A. I. ;

Trofimiv, A. Yu. ;

Trukhanov, E. M. ;

Kolesnikov, A. V. .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (08) :1122-1126

[17] Research on macro- and microsegregation in semiconductor crystals grown from the melt under the direction of August F Witt at the Massachusetts Institute of Technology [J].

Wang, CA ;

Carlson, D ;

Motakef, S ;

Wiegel, M ;

Wargo, MJ .

JOURNAL OF CRYSTAL GROWTH, 2004, 264 (04) :565-577

[18] Large aperture single crystal ZnGeP2 for high-energy applications [J].

Zawilski, Kevin T. ;

Schunemann, Peter G. ;

Setzler, Scott D. ;

Pollak, Thomas M. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :1891-1896

← 1 2 →