X-Ray Topography Characterization of the Bridgman-Grown Crystals of Zinc Germanium Phosphide

被引：2

作者：

Kaloyan, Alexander A. ^{[1
]}

Podurets, Konstantin M. ^{[1
]}

Prokhorov, Igor A. ^{[2
]}

Kovalenko, Ekaterina S. ^{[1
]}

Bezbakh, Ilya Zh. ^{[2
]}

Okunev, Aleksey O. ^{[3
]}

Gribenyukov, Alexander I. ^{[4
,5
]}

Verozubova, Galina A. ^{[4
]}

机构：

[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia

[2] Russian Acad Sci, Shubnikov Inst Crystallog, Fed Sci Res Ctr Crystallog & Photon, Moscow 119333, Russia

[3] Yaroslav The Wise Novgorod State Univ, Inst Elect & Informat Syst, Veliky Novgorod 173003, Russia

[4] Russian Acad Sci, Inst Monitoring Climat & Ecol Syst, Siberian Branch, Tomsk 634055, Russia

[5] Tomsk State Univ, Radiophys Fac, Tomsk 634050, Russia

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2018年 / 53卷 / 11期

关键词：

Bridgman technique; defects; nonlinear optic materials; rocking curve topography; X-ray topography; SEMICONDUCTOR CRYSTALS; SINGLE-CRYSTALS; DIFFRACTION; DEVICE; ZNGEP2;

D O I：

10.1002/crat.201800154

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Samples of the Bridgman-grown nonlinear optic crystal of ZnGeP2 are studied using the methods of topography on a laboratory source and on a synchrotron radiation source. Methods of quasi-plane-wave topography, white beam topography, and rocking curve topography are used. Dislocation bundles, growth striations, small-angle boundaries, and other defects are observed. The macroscopic distribution of defects in crystals and disorientations present in the crystal are studied. The mechanism of formation of images of growth striations is discussed. Digital analysis of the growth striations is carried out to characterize the growth process.

引用

页数：7

共 18 条

[1] Compact, high average power, fiber-pumped terahertz source for active real-time imaging of concealed objects [J].

Creeden, Daniel ;

McCarthy, John C. ;

Ketteridge, Peter A. ;

Schunemann, Peter G. ;

Southward, Timothy ;

Komiak, James J. ;

Chicklis, Evan P. .

OPTICS EXPRESS, 2007, 15 (10) :6478-6483

[2] Mid-infrared ZnGeP2 parametric oscillator directly pumped by a pulsed 2 μm Tm-doped fiber laser [J].

Creeden, Daniel ;

Ketteridge, Peter A. ;

Budni, Peter A. ;

Setzler, Scott D. ;

Young, York E. ;

McCarthy, John C. ;

Zawilski, Kevin ;

Schunemann, Peter G. ;

Pollak, Thomas M. ;

Chicklis, Evan P. ;

Jiang, Min .

OPTICS LETTERS, 2008, 33 (04) :315-317

[3]

Gundyrev V. M., 1973, SINGLE CRYSTAL GROWT, P121

[4] Study of the Crystal Device for Deflecting High-Energy Proton Beams Using Synchrotron Radiation Diffraction [J].

Kaloyan, A. A. ;

Tikhomirov, S. A. ;

Podurets, K. M. ;

Maisheev, V. A. ;

Sandomirskiy, Yu. E. ;

Chesnokov, Yu. A. .

CRYSTALLOGRAPHY REPORTS, 2017, 62 (03) :370-373

[5] THE EFFECT OF REDUCTION OF DISLOCATION DENSITY ON THE LATTICE-DISTORTIONS IN UNDOPED GAAS SINGLE-CRYSTAL GROWN BY LEC METHOD [J].

KITANO, T ;

ISHIKAWA, T ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L282-L284

[6] μm-resolved high resolution X-ray diffraction imaging for semiconductor quality control [J].

Lübbert, D ;

Baumbach, T ;

Härtwig, J ;

Boller, E ;

Pernot, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 160 (04) :521-527

[7]

Muller G., 1988, CRYSTALS, P12

[8] Characterization of single-crystal sapphire substrates by X-ray methods and atomic force microscopy [J].

Prokhorov, I. A. ;

Zakharov, B. G. ;

Asadchikov, V. E. ;

Butashin, A. V. ;

Roshchin, B. S. ;

Tolstikhina, A. L. ;

Zanaveskin, M. L. ;

Grishchenko, Yu. V. ;

Muslimov, A. E. ;

Yakimchuk, I. V. ;

Volkov, Yu. O. ;

Kanevskii, V. M. ;

Tikhonov, E. O. .

CRYSTALLOGRAPHY REPORTS, 2011, 56 (03) :456-462

[9] Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals [J].

Prokhorov, I. A. ;

Serebryakov, Yu. A. ;

Bezbakh, I. Zh. ;

Zakharov, B. G. ;

Ratnikov, V. V. ;

Shcheglov, M. P. ;

Shul'pina, I. L. .

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2009, 3 (06) :936-942

[10] Growth striations and dislocations in highly doped semiconductor single crystals [J].

Prokhorov, I. A. ;

Serebryakov, Yu. A. ;

Zakharov, B. G. ;

Bezbakh, I. Zh. ;

Ratnikov, V. V. ;

Shulpina, I. L. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (24) :5477-5482

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