Defects characterization in SiC by scanning photoluminescence spectroscopy

被引：6

作者：

Masarotto, L ^{[1
]}

Bluet, JM ^{[1
]}

Berenguer, M ^{[1
]}

Girard, P ^{[1
]}

Guillot, G ^{[1
]}

机构：

[1] Inst Natl Sci Appl Lyon, CNRS, UMR 5511, Phys Mat Lab, FR-69621 Villeurbanne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

denuded zones; dislocation; gettering; photoluminescence; spectral mapping;

D O I：

10.4028/www.scientific.net/MSF.353-356.393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Integrated and spectrally resolved Ph scanning was investigated in 6H-SiC epitaxial layers under a laser excitation with a photon energy of about 5.08 eV. Highly spatial resolved measurements revealed the presence of microscopic pattern (5-20 mum) where the integrated PL intensity increases. We suggest that the gettering effect of dislocations trough their strain field is responsible for these microscopic intensity variations. Spectrally resolved PL mappings shows an enhancement of the near band edge peak intensity and width which confirm the presence of a denuded zone in the neighbourhood of the dislocation.

引用

页码：393 / 396

页数：4

共 11 条

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