Lowering the growth temperature of strongly-correlated YbFe2O4 thin films prepared by pulsed laser deposition

被引：8

作者：

Kashimoto, Ryo ^{[1
]}

Yoshimura, Takeshi ^{[1
]}

Ashida, Atsushi ^{[1
]}

Fujimura, Norifumi ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Naka Ku, 1-1 Gakuen Cho, Sakai, Osaka 5998531, Japan

来源：

THIN SOLID FILMS | 2016年 / 614卷

关键词：

Ferroelectric films; Pulsed laser deposition; Rare Earth ferrite; Thin films; DIELECTRIC TUNABILITY; LUFE2O4; FERROELECTRICITY; CHARGE;

D O I：

10.1016/j.tsf.2016.04.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated controlling the stoichiometry, and lowering the growth temperature, of YbFe2O4 thin films, which were fabricated at similar to 900 degrees C. To enhance the formation of YbFe2O4 by pulsed laser deposition (PLD) at 700 degrees C, we precisely controlled the oxygen supply to the substrate, by increasing the chamber pressure. A high growth rate also suppressed the revaporization of Fe ions from the film surface. Optimizing these growth conditions yielded single crystalline YbFe2O4 epitaxial films on (111) yttria-stabilized zirconia (YSZ) at 700 degrees C. The YbFe2O4 films deposited at 700 degrees C exhibited the same temperature dependence of resistivity, as those deposited at 850 degrees C. The resistivity of the former was an order of magnitude higher than the latter, as a result of lower Fe revaporization. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：44 / 46

页数：3

共 23 条

[1] Charge Order in LuFe2O4: Antiferroelectric Ground State and Coupling to Magnetism [J].

Angst, M. ;

Hermann, R. P. ;

Christianson, A. D. ;

Lumsden, M. D. ;

Lee, C. ;

Whangbo, M. -H. ;

Kim, J. -W. ;

Ryan, P. J. ;

Nagler, S. E. ;

Tian, W. ;

Jin, R. ;

Sales, B. C. ;

Mandrus, D. .

PHYSICAL REVIEW LETTERS, 2008, 101 (22)

[2] Ferroelectricity from iron valence ordering in rare earth ferrites? [J].

Angst, Manuel .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (06) :383-400

[3] The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy [J].

Brooks, Charles M. ;

Misra, Rajiv ;

Mundy, Julia A. ;

Zhang, Lei A. ;

Holinsworth, Brian S. ;

O'Neal, Kenneth R. ;

Heeg, Tassilo ;

Zander, Willi ;

Schubert, J. ;

Musfeldt, Janice L. ;

Liu, Zi-Kui ;

Muller, David A. ;

Schiffer, Peter ;

Schlom, Darrell G. .

APPLIED PHYSICS LETTERS, 2012, 101 (13)

[4] Electro-optical effects and temperature-dependent electrical properties of LuFe2O4 thin films [J].

Cai, Bo ;

Nakarmi, Mim L. ;

Franks, Brandon S. ;

Rai, Ram C. .

THIN SOLID FILMS, 2014, 562 :490-494

[5]

Fujimura N., 2011, Japan Patent Kokai, Patent No. [P2011-58044, 201158044]

[6] Electric-field breakdown of the insulating charge-ordered state in LuFe2O4 thin films [J].

Fujiwara, Kohei ;

Hori, Tatsuya ;

Tanaka, Hidekazu .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (15)

[7] TWO-DIMENSIONAL SPIN CORRELATION IN YFE2O4 [J].

FUNAHASHI, S ;

AKIMITSU, J ;

SIRATORI, K ;

KIMIZUKA, N ;

TANAKA, M ;

FUJISHITA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1984, 53 (08) :2688-2696

[8] Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe2O4 [J].

Ikeda, N ;

Ohsumi, H ;

Ohwada, K ;

Ishii, K ;

Inami, T ;

Kakurai, K ;

Murakami, Y ;

Yoshii, K ;

Mori, S ;

Horibe, Y ;

Kitô, H .

NATURE, 2005, 436 (7054) :1136-1138

[9] THE STABILITY OF THE PHASES IN THE LN2O3-FEO-FE2O3 SYSTEMS WHICH ARE STABLE AT ELEVATED-TEMPERATURES (LN - LANTHANIDE ELEMENTS AND Y) [J].

KIMIZUKA, N ;

YAMAMOTO, A ;

OHASHI, H ;

SUGIHARA, T ;

SEKINE, T .

JOURNAL OF SOLID STATE CHEMISTRY, 1983, 49 (01) :65-76

[10]

Kimizuka N., 1990, HDB PHYS CHEM RARE E, P283

← 1 2 3 →