Novel heat dissipating cell scheme for improving a reset distribution in a 512M phase-change random access memory (PRAM)

被引：17

作者：

Kang, D. H. ^{[1
]}

Kim, J. S. ^{[1
]}

Kim, Y. R. ^{[4
]}

Kim, Y. T. ^{[2
]}

Lee, M. K. ^{[1
]}

Jun, Y. J. ^{[1
]}

Park, J. H. ^{[1
]}

Yeung, F. ^{[1
]}

Jeong, C. W. ^{[1
]}

Yu, J. ^{[1
]}

Kong, J. H. ^{[1
]}

Ha, D. W. ^{[1
]}

Song, S. A. ^{[5
]}

Park, J. ^{[5
]}

Park, Y. H. ^{[3
]}

Song, Y. J. ^{[1
]}

Eum, C. Y. ^{[1
]}

Ryoo, K. C. ^{[1
]}

Shin, J. M. ^{[1
]}

Lim, D. W. ^{[1
]}

Park, S. S. ^{[1
]}

Kim, J. H. ^{[1
]}

Park, W. I. ^{[1
]}

Sim, K. R. ^{[1
]}

Cheong, J. H. ^{[1
]}

Oh, J. H. ^{[1
]}

Park, J. H. ^{[1
]}

Kim, J. I. ^{[1
]}

Oh, Y. T. ^{[1
]}

Lee, K. W. ^{[1
]}

Koh, S. P. ^{[1
]}

Eun, S. H. ^{[1
]}

Kim, N. B. ^{[1
]}

Koh, G. H. ^{[1
]}

Jeong, G. T. ^{[1
]}

Jeong, H. S. ^{[1
]}

Kim, Kinam ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Adv Technol Dev Team 2, San 24, Yongin 449711, Gyunggi Do, South Korea

[2] Samsung Elect Co Ltd, CAE, Yongin 449711, Gyunggi Do, South Korea

[3] Samsung Elect Co Ltd, Proc Anal & Control Grp, Memory R&D Div, Yongin 449711, Gyunggi Do, South Korea

[4] Samsung Elect Co Ltd, Semi Business, Yongin 449711, Gyunggi Do, South Korea

[5] Samsung Adv Inst Technol, Analyt Engn Ctr, Yongin 449711, Gyunggi Do, South Korea

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge2Sb2Te5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

引用

页码：96 / +

页数：2

共 3 条

[1]

[Anonymous], IEDM

[2]

OH JH, 2006, IEDM

[3] Electronic switching in phase-change memories [J].

Pirovano, A ;

Lacaita, AL ;

Benvenuti, A ;

Pellizzer, F ;

Bez, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) :452-459

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