Energetic and electronic properties in a multilayered ZnO graphene-like nanostructure

被引：6

作者：

Fernandes, Flaviano Williams ^{[1
]}

Gigante de Paiva, Vitor Fernando ^{[1
]}

Thim, Gilmar Patrocinio ^{[1
]}

机构：

[1] Inst Tecnol Aeronaut, Dept Fis, BR-12228900 Sao Jose Dos Campos, SP, Brazil

来源：

Materials Research-Ibero-american Journal of Materials | 2016年 / 19卷 / 03期

关键词：

First principle calculation; Graphene structure; ZnO nanostructure; ZINC-OXIDE; THIN-FILMS; SENSORS; GROWTH;

D O I：

10.1590/1980-5373-MR-2015-0432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanostructures based on ZnO have been widely studied due to their electronic and piezoelectric properties. Experimental studies have shown that thin films based on ZnO can be used as chemical and optoelectronic sensors. The great goal of this work is to study of the role of the number of graphene-like layers in the physical properties of the ZnO. Therefore, the geometrical and electronic properties of graphene-like structures will be compared with the wurtzite one. In this work, the pn-type semiconducting behavior of the graphene-like structures and its relationship with the number of layers will be also analyzed.

引用

页码：497 / 504

页数：8

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