Analysis of the sublimation growth process of silicon carbide bulk crystals

被引：18

作者：

Eckstein, R

Hofmann, D

Makarov, Y

Muller, SG

Pensl, G

Schmitt, E

Winnacker, A

机构：

来源：

III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷

关键词：

D O I：

10.1557/PROC-423-215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SiC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

引用

页码：215 / 220

页数：6