Lifetime Model for Advanced N-Channel Transistor Hot-Carrier-Injection Degradation

被引：3
作者：
Dai, Mingzhi [1 ]
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 06期
关键词：
Semiconductor device measurement; semiconductor device modeling; semiconductor device reliability;
D O I：
10.1109/LED.2010.2046392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A hot-carrier-injection (HCI) lifetime model of high-voltage (HV) N-channel transistors based on physical and mathematical basis is proposed. HV N-channel transistors show two peak values in the substrate-current-gate-voltage curve due to two high-electric-field regions (THFRs). The THFRs of HV transistors are found to be responsible for two coexistent HCI degradation mechanisms-interface trap generation and hole injection. The HCI lifetime model is modified based on the combined degradation mechanisms and updated substrate current model in HV N-channel transistors.
引用
收藏
页码：525 / 527
页数：3
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