T-gate ALGaN/GaN HEMT with effective recess engineering for enhancement mode operation

This paper reports, AlGaN/GaN HEMT device with Enhancement mode (Positive threshold voltage) oper-ation achieved by Piezo neutralization layer (PNT) and T-Gate structure, along with gate recess engineer-ing technique. The Proposed T-Gate structure HEMT device is analyzed with two different gate recess depths. Better results is obtained with 0.015 mu m gate recess, showing double the time transconductance gm of 370 mS/mm compared with conventional AlGaN/GaN HEMT, Moreover positive Threshold Voltage +0.3 V is achieved without compromising ON-resistance R-ON = 0.00269 Omega. The TCAD simulation results evidence that proposed HEMT structure efficient in terms enhancement mode operation and device parameters than conventional HEMT. (C) 2021 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Confer-ence on Advances in Materials Research - 2019.