Pressure-induced structural transitions and metallization in hollow ZnMn2O4 microspheres

被引:9
作者
Zhang, Yuhang [1 ]
Yan, Huiyu [1 ]
Song, Qinggong [1 ]
Zhou, Qingjun [1 ]
Li, Zepeng [1 ]
Liu, Ye [1 ]
机构
[1] Civil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China
关键词
ZnMn2O4; High-pressure; Structural transitions; Electronic topological transition; Metallization; Spin-state; ELECTRONIC TOPOLOGICAL TRANSITION; HIGH-PERFORMANCE ANODE; TRANSPORT-PROPERTIES; FACILE SYNTHESIS; THERMOELECTRIC-POWER; PHASE-TRANSITION; BEHAVIOR;
D O I
10.1016/j.jallcom.2019.152881
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-pressure in situ angle dispersive X-ray diffraction (ADXRD) measurements combined with first-principles calculations were performed on hollow ZnMn2O4 microspheres up to 43.5 GPa at room temperature, and two high-pressure phases emerged at 15.9 GPa. Phase III was assigned to the CaMn2O4 type structure (space group Pbcm). It is supposed that phase II probably has a MgAl2S4 inverted spinel type structure (space group Imma). Moreover, phase I, phase II and phase III were probably coexisted when pressure was released. The compressional behaviors of phase I (space group I4(1)/amd) and phase III were all determined. Besides, based on electronic band structure calculations, it was uncovered that phase I probably experiences a pressure-induced electronic topological transition (ETT) to a semimetallic state upon pressure, and phase III is a semimetallic state. Our results show that pressure play a dramatic role in tuning ZnMn2O4's crystalline structures, electrical behavior and spin-state. (C) 2019 Elsevier B.V. All rights reserved.
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页数:5
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