Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire

被引:37
|
作者
Ueda, K. [1 ]
Koyama, T. [1 ]
Hiramatsu, R. [1 ]
Chiba, D. [1 ,2 ]
Fukami, S. [3 ,4 ]
Tanigawa, H. [5 ]
Suzuki, T. [5 ]
Ohshima, N. [6 ]
Ishiwata, N. [3 ]
Nakatani, Y. [7 ]
Kobayashi, K. [1 ]
Ono, T. [1 ]
机构
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3220012, Japan
[3] NEC Corp Ltd, Green Innovat Res Labs, Tsukuba, Ibaraki 3058501, Japan
[4] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[5] RENESAS Elect Corp, Sagamihara, Kanagawa 2525298, Japan
[6] NEC Energy Device Ltd, Chuo Ku, Sagamihara, Kanagawa 2525298, Japan
[7] Univ Electrocommun, Chofu, Tokyo 1828585, Japan
基金
日本学术振兴会;
关键词
ROOM-TEMPERATURE; MAGNETORESISTANCE; SHIFT; METAL;
D O I
10.1063/1.4718599
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the temperature dependence of the current-induced magnetic domain wall (DW) motion in a perpendicularly magnetized Co/Ni nanowire at various temperatures and with various applied currents. The carrier spin polarization was estimated from the measured domain wall velocity. We found that it decreased more with increasing temperature from 100 K to 530 K than the saturation magnetization did. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718599]
引用
收藏
页数:3
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