Magnetotransport properties of electrodeposited bismuth films

被引:33
作者
O'Brien, B. [1 ]
Plaza, M. [3 ]
Zhu, L. Y. [2 ]
Perez, L. [3 ]
Chien, C. L. [2 ]
Searson, P. C. [1 ]
机构
[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
[2] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA
[3] Univ Complutense Madrid, Madrid, Spain
关键词
D O I
10.1021/jp802802j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Bismuth is a sernimetal with unusual transport properties, such as long mean free path and large magnetoresistance (MR) effect. Here we report on the influence of deposition potential, Bi(III) concentration, and thickness on the microstructure and morphology of bismuth thin films. Polycrystalline bismuth films were deposited on gold from bismuth nitrate solution. The texture of the films is strongly dependent on deposition potential and Bi(III) concentration, but only weakly dependent on film thickness. The film morphology is strongly dependent on deposition potential and on film thickness. The magnetoresistance (MR) of the as-deposited films was highly dependent film morphology and grain size. Understanding the structure-property relationships is an important first step in optimizing the transport properties of as-deposited films and patterned features.
引用
收藏
页码:12018 / 12023
页数:6
相关论文
共 24 条
[1]   THE MAGNETORESISTANCE OF BISMUTH CRYSTALS AT LOW TEMPERATURES [J].
ALERS, PB ;
WEBBER, RT .
PHYSICAL REVIEW, 1953, 91 (05) :1060-1065
[2]   Epitaxial Bi/GaAs diodes via electrodeposition [J].
Bao, Zhi Liang ;
Kavanagh, Karen L. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04) :2138-2143
[3]  
BAO ZL, 2006, APPL PHYS LETT, V88
[4]   ELECTRODEPOSITED BISMUTH MONOLAYERS ON AU(111) ELECTRODES - COMPARISON OF SURFACE X-RAY-SCATTERING, SCANNING-TUNNELING-MICROSCOPY, AND ATOMIC-FORCE MICROSCOPY LATTICE STRUCTURES [J].
CHEN, CH ;
KEPLER, KD ;
GEWIRTH, AA ;
OCKO, BM ;
WANG, J .
JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (28) :7290-7294
[5]   GALVANOMAGNETIC STUDIES OF BISMUTH FILMS IN QUANTUM-SIZE-EFFECT REGION [J].
GARCIA, N ;
STRONGIN, M ;
KAO, YH .
PHYSICAL REVIEW B, 1972, 5 (06) :2029-&
[6]   Giant positive magnetoresistance of Bi nanowire arrays in high magnetic fields [J].
Hong, KM ;
Yang, FY ;
Liu, K ;
Reich, DH ;
Searson, PC ;
Chien, CL ;
Balakirev, FF ;
Boebinger, GS .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :6184-6186
[7]   Lithographic point contacts for transverse electron focusing in bismuth [J].
Jaeger, M.D. ;
Tsoi, V. ;
Golding, B. .
1996, American Inst of Physics, Woodbury, NY, USA (68)
[8]   X-ray characterization of as-deposited, epitaxial films of Bi(012) on Au(111) [J].
Jeffrey, CA ;
Zheng, SH ;
Bohannan, E ;
Harrington, DA ;
Morin, S .
SURFACE SCIENCE, 2006, 600 (01) :95-105
[9]   In situ scanning tunneling microscopy of bismuth electrodeposition on Au(111) surfaces [J].
Jeffrey, CA ;
Harrington, DA ;
Morin, S .
SURFACE SCIENCE, 2002, 512 (1-2) :L367-L372
[10]   Finite-size effects in bismuth nanowires [J].
Liu, K ;
Chien, CL ;
Searson, PC .
PHYSICAL REVIEW B, 1998, 58 (22) :14681-14684