Water-free gallium phosphate single-crystal growth from the flux

被引:3
作者
Barz, R. U. [1 ]
Ghemen, S. V. [1 ]
机构
[1] Univ Munich, Dept Earth & Environm Sci, Crystallog Sect, D-80333 Munich, Germany
关键词
Growth from high-temperature solutions; Phosphates; Piezoelectric materials;
D O I
10.1016/j.jcrysgro.2004.11.079
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The application of gallium phosphate (GaPO4) for piezoelectric devices at high temperatures is limited due to the OH- content of the crystals. The solvents used in the established hydrothermal growth of these crystals are considered the source of these defects. Thus, their complete exclusion should be possible by using water-free solvents. Single crystals of GaPO4 have been grown from the NaCl flux by cooling from about 900 to 600 degrees C. This paper reports on the first results referring to such flux-grown GaPO4 crystals. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:E921 / E926
页数:6
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