Hot electron generation from intense laser irradiation of microtipped cone and wedge targets

被引:10
作者
Cho, B. I. [1 ]
Dyer, G. M. [1 ]
Kneip, S. [1 ]
Pikuz, S. [2 ]
Symes, D. R. [1 ]
Bernstein, A. C. [1 ]
Sentoku, Y. [3 ]
Galloudec, N. Renard-Le [3 ]
Cowan, T. E. [3 ]
Ditmire, T. [1 ]
机构
[1] Univ Texas Austin, Texas Ctr High Intens Laser Sci, Dept Phys, Austin, TX 78712 USA
[2] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
[3] Univ Nevada, Nevada Terawatt Facil, Dept Phys, Reno, NV 89521 USA
关键词
D O I
10.1063/1.2912457
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
X-ray production from the interaction of femtosecond laser pulses focused to relativistic intensity into re-entrant targets etched into silicon has been investigated. K-alpha and hard x-ray yields were compared when the laser was focused into pyramidal shaped cone targets and wedge shaped targets. Hot electron production is highest in the wedge targets irradiated with transverse polarization, though K-alpha is maximized with wedge targets and parallel polarization. These results are explained with particle-in-cell simulations. (c) 2008 American Institute of Physics.
引用
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页数:6
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