Light-induced degradation of very low resistivity multi-crystalline silicon solar cells

被引：8

作者：

De Wolf, S ^{[1
]}

Choulat, P ^{[1
]}

Szlufcik, J ^{[1
]}

Périchaud, I ^{[1
]}

Martinuzzi, S ^{[1
]}

Hässler, C ^{[1
]}

Krumbe, W ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915751

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An J(SC) degradation under illumination has been measured for finished solar cells processed from multicrystalline B-doped Si-substrates with resistivities below 0.1 Omega cm. This phenomenon has been studied as function of the different applied processing steps and as function of the boron- and oxygen-concentration of the substrate. The observed effect is likely related to a reversible formation of boron-oxygen complexes, introducing traps in the bandgap. This behaviour is similar to what has been reported in literature for carrier lifetime instabilities of 1 Omega cm Cz-Si. The degradation was found to be fully reversible by a low-temperature anneal at about 200 degreesC, provided that the degradation causing defects have not been passivated by hydrogenation.

引用

页码：53 / 56

页数：4