Energy relaxation for hot Dirac fermions in graphene and breakdown of the quantum Hall effect

被引:53
|
作者
Baker, A. M. R. [1 ]
Alexander-Webber, J. A. [1 ]
Altebaeumer, T. [1 ]
Nicholas, R. J. [1 ]
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 11期
基金
英国工程与自然科学研究理事会;
关键词
CYCLOTRON PHONON EMISSION; LOSS RATES; RESISTANCE STANDARD; EPITAXIAL GRAPHENE; TRANSPORT; HETEROSTRUCTURES; HETEROJUNCTIONS; DISSIPATION; TRANSISTORS; DEVICES;
D O I
10.1103/PhysRevB.85.115403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Energy loss rates for hot carriers in graphene are experimentally investigated by observing the amplitude of Shubnikov-de Haas oscillations as a function of electric field. The carrier energy loss in graphene follows the predictions of deformation potential coupling going as similar to T-4 at carrier temperatures up to similar to 100 K, and that deformation potential theory, when modified with a limiting phonon relaxation time, is valid up to several hundred Kelvin. Additionally we investigate the breakdown of the quantum Hall effect and show that energy loss rates in graphene are around ten times larger than GaAs at low temperatures. This leads to significantly higher breakdown currents per micrometer, and we report a measured breakdown current of 8 mu A/mu m.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Energy relaxation of hot Dirac fermions in graphene
    Tse, Wang-Kong
    Das Sarma, S.
    PHYSICAL REVIEW B, 2009, 79 (23):
  • [2] Dirac and normal fermions in graphite and graphene: Implications of the quantum hall effect
    Luk'yanchuk, Igor A.
    Kopelevich, Yakov
    PHYSICAL REVIEW LETTERS, 2006, 97 (25)
  • [3] Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene
    Huang, J.
    Alexander-Webber, J. A.
    Janssen, T. J. B. M.
    Tzalenchuk, A.
    Yager, T.
    Lara-Avila, S.
    Kubatkin, S.
    Myers-Ward, R. L.
    Wheeler, V. D.
    Gaskill, D. K.
    Nicholas, R. J.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (16)
  • [4] Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene
    Taychatanapat, Thiti
    Watanabe, Kenji
    Taniguchi, Takashi
    Jarillo-Herrero, Pablo
    NATURE PHYSICS, 2011, 7 (08) : 621 - 625
  • [5] Massive Dirac fermions and the zero field quantum Hall effect
    Raya, Alfredo
    Reyes, Edward D.
    JOURNAL OF PHYSICS A-MATHEMATICAL AND THEORETICAL, 2008, 41 (35)
  • [6] Terahertz quantum Hall effect of Dirac fermions in a topological insulator
    Shuvaev, A. M.
    Astakhov, G. V.
    Tkachov, G.
    Bruene, C.
    Buhmann, H.
    Molenkamp, L. W.
    Pimenov, A.
    PHYSICAL REVIEW B, 2013, 87 (12):
  • [7] Fractional quantum Hall effect in Hofstadter butterflies of Dirac fermions
    Ghazaryan, Areg
    Chakraborty, Tapash
    Pietilainen, Pekka
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (18)
  • [8] Edge-Channel Transport of Dirac Fermions in Graphene Quantum Hall Junctions
    Machida, Tomoki
    Morikawa, Sei
    Masubuchi, Satoru
    Moriya, Rai
    Arai, Miho
    Watanabe, Kenji
    Taniguchi, Takashi
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2015, 84 (12)
  • [9] Quantum Hall Effect of Massless Dirac Fermions and Free Fermions in Hofstadter's Butterfly
    Yoshioka, Nobuyuki
    Matsuura, Hiroyasu
    Ogata, Masao
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2016, 85 (06)
  • [10] Quantum hall effect in a system of gapless Dirac fermions in HgTe quantum wells
    D. A. Kozlov
    Z. D. Kvon
    N. N. Mikhailov
    S. A. Dvoretskii
    JETP Letters, 2015, 100 : 724 - 730