Energy loss rates for hot carriers in graphene are experimentally investigated by observing the amplitude of Shubnikov-de Haas oscillations as a function of electric field. The carrier energy loss in graphene follows the predictions of deformation potential coupling going as similar to T-4 at carrier temperatures up to similar to 100 K, and that deformation potential theory, when modified with a limiting phonon relaxation time, is valid up to several hundred Kelvin. Additionally we investigate the breakdown of the quantum Hall effect and show that energy loss rates in graphene are around ten times larger than GaAs at low temperatures. This leads to significantly higher breakdown currents per micrometer, and we report a measured breakdown current of 8 mu A/mu m.
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Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, JapanUniv Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
Machida, Tomoki
Morikawa, Sei
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Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, JapanUniv Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
Morikawa, Sei
Masubuchi, Satoru
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Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, JapanUniv Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
Masubuchi, Satoru
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Moriya, Rai
Arai, Miho
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Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, JapanUniv Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
Arai, Miho
Watanabe, Kenji
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Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, JapanUniv Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
Watanabe, Kenji
Taniguchi, Takashi
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Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, JapanUniv Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan