Effect of tantalum nitride supporting layer on growth and morphology of carbon nanotubes by thermal chemical vapor deposition

被引：5

作者：

Bouchet-Fabre, B. ^{[1
]}

Fadjie-Djomkam, A. ^{[1
,2
]}

Fernandez-Pacheco, R. ^{[3
,4
]}

Delmas, M. ^{[1
]}

Pinault, M. ^{[1
]}

Jegou, P. ^{[5
]}

Reynaud, C. ^{[1
]}

Mayne-L'Hermite, M. ^{[1
]}

Stephan, O. ^{[3
]}

Minea, T. ^{[2
]}

机构：

[1] CEA Saclay, CNRS, URA 2453, Lab Francis Perrin,DSM,IRAMIS,SPAM, F-91191 Gif Sur Yvette, France

[2] Univ Paris 11, CNRS, UMR 8578, Phys Gaz & Plasmas Lab, F-91405 Orsay, France

[3] Univ Paris 11, CNRS, UMR 8502, STEM Grp,Lab Phys Solides, F-91405 Orsay, France

[4] Univ Zaragoza, Inst Nanociencia Aragon LMA INA, Zaragoza 50018, Spain

[5] CEA Saclay, SPCS, IRAMIS, DSM,CEA, F-91191 Gif Sur Yvette, France

来源：

关键词：

Carbon nanotubes; Chemical vapour deposition; Tantalum nitride; Raman; High resolution transmission electron microscopy; Barrier layer; PHOTOELECTRON-SPECTROSCOPY; BARRIER LAYERS; FILMS; NANOPARTICLES; COMPOSITES; PYROLYSIS; DIFFUSION; GRAPHITE; GRAPHENE; FIBERS;

D O I：

10.1016/j.diamond.2011.05.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of tantalum nitride (TaNx) thin films as buffer layers on the control of nucleation and growth of aligned carpet-like carbon nanotubes (CNTs) has been proved. TaNx thin films have been deposited on Si by controlled magnetron sputtering process. Multiwall CNTs have been synthesized at 850 degrees C using an aerosol of ferrocene diluted in toluene. Electron microscopy images show a strong correlation between the growth rate and morphology of the CNTs and the initial composition of the TaNx thin films. Multi-scale investigations reveal that both morphology and structure of the CNTs are determined by the properties of the TaNx films. Raman and X-ray photoelectron spectroscopy, high resolution TEM imaging at the submicrometric and atomic scales have been used to confirm these hypotheses. (C) 2011 Published by Elsevier B.V.

引用

页码：999 / 1004

页数：6

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