5.3 GHz 42% PAE class-E power amplifier with 532 mW/mm2 power area density in 180 nm CMOS process

被引：5

作者：

Alsuraisry, H. ^{[1
]}

Wu, M. -H. ^{[2
]}

Huang, P. -S. ^{[2
]}

Tsai, J. -H. ^{[3
]}

Huang, T. -W. ^{[2
]}

机构：

[1] KACST, Commun & Informat Technol Res Inst, Riyadh, Saudi Arabia

[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10610, Taiwan

来源：

ELECTRONICS LETTERS | 2016年 / 52卷 / 15期

关键词：

Economic and social effects - CMOS integrated circuits - Power amplifiers;

D O I：

10.1049/el.2016.1629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5.3 GHz high-efficiency and low-cost class-E power amplifier (PA) implemented in a 180 nm CMOS process is presented. Cascode configuration is utilised in the class-E PA to achieve high efficiency due to its high gain property and low drain-to-source parasitic capacitor. Through the trade-off between inductance and inductor loss, an optimised RF choke inductor for fully integrated class-E PA design can be selected to achieve high efficiency while maintaining compact circuit size. The class-E CMOS PA demonstrates the highest Power Added Efficiency (PAE) of 42% and greatest power area density of 532 mW/mm(2) in 0.263 mm(2) chip area to date.

引用

页码：1338 / 1339

页数：2

共 9 条

[1]

Chen J., 2012, COMPOUND SEMICONDUCT, P1

[2]

Fathi M, 2013, ISSCC DIG TECH PAP I, V56, P88, DOI 10.1109/ISSCC.2013.6487649

[3] A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS [J].

Haldi, Peter ;

Chowdhury, Debopriyo ;

Reynaert, Patrick ;

Liu, Gang ;

Niknejad, Ali M. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (05) :1054-1063

[4] A fully integrated 26.5 dBm CMOS power amplifier for IEEE 802.11a WLAN standard with on-chip "power inductors" [J].

Solar, Hector ;

Berenguer, Roc ;

Adin, Inigo ;

Alvarado, Unai ;

Cendoya, Iosu .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :1875-+

[5]

Wang HR, 2014, IEEE RAD FREQ INTEGR, P409, DOI 10.1109/RFIC.2014.6851754

[6]

Wang T., 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium, P1

[7]

YAMASHITA Y, 2013, IEEE SIRF, P66

[8]

YAMASHITA Y, 2012, IEEE RFIT, P237

[9]

Ye Wanxin., 2015, IEEE INT SOLID STATE, P1

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