Structure and 1/f noise of boron doped polymorphous silicon films

被引：36
作者：
Li, S. B. [1 ]
Wu, Z. M. [1 ]
Jiang, Y. D. [1 ]
Li, W. [1 ]
Liao, N. M. [1 ]
Yu, J. S. [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Film & Integrated Dev, Chengdu 610054, Peoples R China
来源：
NANOTECHNOLOGY | 2008年 / 19卷 / 08期
关键词：
D O I：
10.1088/0957-4484/19/8/085706
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The influence of structure variation on the 1/f noise of nanometric boron doped hydrogenated polymorphous silicon (pm-Si:H) films was investigated. The films were grown by the conventional radio frequency plasma enhanced chemical vapor deposition (PECVD) method. Raman spectroscopy was used to reveal the crystalline volume fraction (X-c) and crystal size of the pm-Si:H. The measurement of optical and structure properties was carried out with spectroscopic ellipsometry (SE) in the Tauc-Lorentz model. A Fourier transform infrared (FTIR) spectrometer was used to characterize the presence of nanostructure-sized silicon clusters in pm-Si:H film deposited on KBr substrate. The electrical properties of the films were measured using evaporated coplanar nickel as the electrode. A semiconductor system was designed to obtain the 1/f noise of pm-Si:H film as well as that of amorphous and microcrystalline silicon films. The results demonstrate that the 1/f noise of pm-Si:H is nearly as low as that of microcrystalline silicon and much lower than that of amorphous silicon. The disorder to order transition mechanism of crystallization was used to analyze the decrease of noise compared with amorphous silicon.
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页数：6
相关论文
共 36 条
[1]   Let there be light [J].
Ball, P .
NATURE, 2001, 409 (6823) :974-976
[2]   BOND SELECTIVITY IN SILICON FILM GROWTH [J].
BOLAND, JJ ;
PARSONS, GN .
SCIENCE, 1992, 256 (5061) :1304-1306
[3]   Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices [J].
Cabarrocas, P. Roca i ;
Nguyen-Tran, Th ;
Djeridane, Y. ;
Abramov, A. ;
Johnson, E. ;
Patriarche, G. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (08) :2258-2266
[4]   Optimization of plasma parameters for the production of silicon nano-crystals -: art. no. 37 [J].
Chaâbane, N ;
Kharchenko, AV ;
Vach, H ;
Cabarrocas, PRI .
NEW JOURNAL OF PHYSICS, 2003, 5 :37.1-37.15
[5]   Soft landing of silicon nanocrystals in plasma enhanced chemical vapor deposition [J].
Chaabane, Nihed ;
Suendo, Veinardi ;
Vach, Holger ;
Cabarrocasa, Pere Roca i .
APPLIED PHYSICS LETTERS, 2006, 88 (20)
[6]   Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon -: art. no. 125207 [J].
Fine, BV ;
Bakker, JPR ;
Dijkhuis, JI .
PHYSICAL REVIEW B, 2003, 68 (12)
[7]   Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films [J].
Fujiwara, H ;
Koh, J ;
Rovira, PI ;
Collins, RW .
PHYSICAL REVIEW B, 2000, 61 (16) :10832-10844
[8]   Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers [J].
Gueunier-Farret, M. E. ;
Kleider, J. P. ;
Voigt, F. ;
Brueggemann, R. ;
Bauer, G. H. ;
Huisken, F. ;
Ledoux, G. .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1101-1104
[9]  
HOVE LV, 1959, PHYS REV B, V89, P1189
[10]   Charged clusters in thin film growth [J].
Hwang, NM ;
Kim, DY .
INTERNATIONAL MATERIALS REVIEWS, 2004, 49 (3-4) :171-190
1234