Effects of growth temperature on titanium carbide (TiC) film formation using low-frequency (60 Hz) plasma-enhanced chemical vapor deposition

TiC films were formed by low-frequency (60 Hz) plasma-enhanced chemical vapor deposition (LFPECVD) using TiCl4, CH4, and H-2 gas mixtures. The effects of the growth temperature and feasibility for the on-glass deposition of TiC films were investigated. The growth kinematics of TiC films was controlled mainly by surface-reactions below 450 AC, and dominated by a mass-transfer process above 450 AC. The films exhibited a face-centered cubic structure, and the preferred orientation of film growth was mainly the (200) plane. The [C]/[Ti] ratio was over-stoichiometric below 400 AC, and became almost stoichiometric above 450 AC. The optical properties of the films were characterized by high reflectance in near infrared (NIR) region and a steep edge in the visible region, and the reflectance in the NIR region increased gradually with increasing temperature. As a result, LF-PECVD is a useful technique to acquire Cl-free TiC films at relatively low temperatures.