Design, Fabrication, and Dynamic Environmental Test of a Piezoresistive Pressure Sensor

被引:7
作者
Gao, Rui [1 ]
Zhang, Wenjun [2 ]
Jing, Junmin [1 ]
Liao, Zhiwei [1 ]
Zhao, Zhou [1 ]
Yao, Bin [1 ]
Zhang, Huiyu [1 ]
Guo, Yuzhen [1 ]
Xu, Yanbo [1 ]
Wang, Yonghua [1 ]
Zhang, Zengxing [2 ]
Zhang, Zhidong [1 ]
Xue, Chenyang [1 ]
机构
[1] North Univ China, State Key Lab Dynam Measurement Technol, Taiyuan 030051, Peoples R China
[2] Xiamen Univ, Sch Aerosp Engn, Xiamen 361102, Peoples R China
基金
中国国家自然科学基金;
关键词
piezoresistive pressure sensor; silicon-on-insulator (SOI) structure; dynamic environment test; SILICON NANOWIRES; STRAIN SENSORS; DIAPHRAGM; TEMPERATURE; STRESS; SENSITIVITY; OUTPUT; FILMS;
D O I
10.3390/mi13071142
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Microelectromechanical system (MEMS) pressure sensors have a wide range of applications based on the advantages of mature technology and easy integration. Among them, piezoresistive sensors have attracted great attention with the advantage of simple back-end processing circuits. However, less research has been reported on the performance of piezoresistive pressure sensors in dynamic environments, especially considering the vibrations and shocks frequently encountered during the application of the sensors. To address these issues, this paper proposes a design method for a MEMS piezoresistive pressure sensor, and the fabricated sensor is evaluated in a series of systematic dynamic environmental adaptability tests. After testing, the output sensitivity of the sensor chip was 9.21 mV center dot bar(-1), while the nonlinearity was 0.069% FSS. The sensor overreacts to rapidly changing pressure environments and can withstand acceleration shocks of up to 20x g. In addition, the sensor is capable of providing normal output over the vibration frequency range of 0-5000 Hz with a temperature coefficient sensitivity of -0.30% FSS degrees C-1 over the temperature range of 0-80 degrees C. Our proposed sensor can play a key role in applications with wide pressure ranges, high-frequency vibrations, and high acceleration shocks, as well as guide MEMS-based pressure sensors in high pressure ranges and complex environmental adaptability in their design.
引用
收藏
页数:15
相关论文
共 37 条
[11]   The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review [J].
Hoang-Phuong Phan ;
Dzung Viet Dao ;
Nakamura, Koichi ;
Dimitrijev, Sima ;
Nam-Trung Nguyen .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2015, 24 (06) :1663-1677
[12]   Thermal stress analyses of multilayered films on substrates and cantilever beams for micro sensors and actuators [J].
Hsueh, C. H. ;
Luttrell, C. R. ;
Cui, T. .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2006, 16 (11) :2509-2515
[13]   A high sensitivity and high linearity pressure sensor based on a peninsula-structured diaphragm for low-pressure ranges [J].
Huang, Xian ;
Zhang, Dacheng .
SENSORS AND ACTUATORS A-PHYSICAL, 2014, 216 :176-189
[14]  
Kinnell P.K., 2009, P 23 EUROSENSORS C
[15]   Anodic bonding [J].
Knowles, K. M. ;
van Helvoort, A. T. J. .
INTERNATIONAL MATERIALS REVIEWS, 2006, 51 (05) :273-311
[16]   Prototyping of a highly performant and integrated piezoresistive force sensor for microscale applications [J].
Komati, Bilal ;
Agnus, Joel ;
Clevy, Cedric ;
Lutz, Philippe .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2014, 24 (03)
[17]  
Kumar S., 2012, P 16 INT WORKSHOP PH
[18]  
Kumar S.S., 2015, P 2015 19 INT S VLSI
[19]  
Leondes C.T., 2006, MEMSNEMS HDB TECHNIQ
[20]   A novel SOI pressure sensor for high temperature application [J].
Li Sainan ;
Liang Ting ;
Wang Wei ;
Hong Yingping ;
Zheng Tingli ;
Xiong Jijun .
JOURNAL OF SEMICONDUCTORS, 2015, 36 (01)