Engineering of planar photonic crystal waveguides on silicon-on-insulator for larger guiding bandwidth

被引：0
|
作者：
Atabaki, Amir H. [1 ]
Hosseini, Ehsan Shah [1 ]
Momeni, Babak [1 ]
Adibi, Ali [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
PHOTONIC CRYSTAL MATERIALS AND DEVICES VII | 2008年 / 6901卷
关键词：
integrated optics; photonic crystal slabs; photonic crystal waveguides;
D O I：
10.1117/12.778575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photonic crystal waveguides (PCW) on silicon-on-insulator (SOI) are considered as a promising guiding platform with flexible guiding properties for dense photonics integration. Although SOI is a versatile material for photonics integration, PCWs fabricated on SOI substrates suffer from small guiding bandwidth due to the coupling to leaky TM-like modes. The purpose of this work is to present a systematic approach to increase the low-loss guiding bandwidth of PCWs on SOL This has been achieved by reducing the interaction of low-group-velocity modes with the surrounding photonic crystal. By this method the low-loss bandwidth of a W I PCW is increased from 2.5 nm to 12 nm which is the highest reported for this type of waveguide. We also present a detailed analysis of transmission properties of W I PCWs and elaborate on the coupling to TM-like guided modes present in the low-loss transmission bandwidth of this device.
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页数：8
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