284-300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates

被引：22

作者：

Fujikawa, Sachie ^{[1
,2
]}

Hirayama, Hideki ^{[1
,2
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期

关键词：

LAYERS; ALN;

D O I：

10.1143/APEX.4.061002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated 280-300-nm-band quaternary InAlGaN based deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on Si(111) substrates, grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). An ammonia pulsed-flow growth method was used in the initial stages of AlN growth on Si substrates in order to achieve low threading dislocation densities with thin AlN layer. We obtained single-peaked spectra from the DUV LEDs at wavelengths between 284 and 300 nm under room temperature continuous-wave (cw) operation. It is expected that low-cost and large-size DUV LEDs could become available in the near future by increasing light-extraction by removing the Si substrate. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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