Field emission in doped nanotubes

被引：38

作者：

Zhou, G ^{[1
]}

Duan, WH ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2005年 / 5卷 / 09期

关键词：

doping; field emission; localized doping electronic states; nanotubes;

D O I：

10.1166/jnn.2005.305

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Doping into nanotubes is an attractive and significant way to tailor their electron transport and emission properties. This article reviews some recent experimental and theoretical advances in the studies of doping behaviors in carbon nanotubes and gallium nitrogen nanotubes, and doping effects on their field electron emission properties. The general theory for field emission mechanism of one-dimensional nanosystems is presented to provide an overall picture of the field emission process and doping behavior. Potential applications of doped nanotubes as diverse nanoscale emitters, microscopy probes, electronic guns and nanoelectronic devices are discussed.

引用

页码：1421 / 1434

页数：14

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