Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices

被引：4

作者：

Li Zhe-Yang ^{[1
,2
]}

Han Ping ^{[1
]}

Li Yun ^{[2
]}

Ni Wei-Jiang ^{[2
]}

Bao Hui-Qiang ^{[3
]}

Li Yu-Zhu ^{[2
]}

机构：

[1] Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[2] Nanjing Elect Devices Inst, Natl Key Lab Monolith Integrated Circuits & Modul, Nanjing 210016, Peoples R China

[3] TanKeBlue Semicond CO Ltd, Beijing 100190, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 09期

关键词：

REACTOR; DIODES; LAYERS;

D O I：

10.1088/0256-307X/28/9/098101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Homo-epitaxial layers are successfully grown on Si-face 4 degrees off-axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I-V characteristic. This is the first report of Schottky diodes fabricated on 4 degrees off-axis 4H-SiC substrates made in China.

引用

页数：3

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