Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices

被引：4
|
作者：
Li Zhe-Yang [1 ,2 ]
Han Ping [1 ]
Li Yun [2 ]
Ni Wei-Jiang [2 ]
Bao Hui-Qiang [3 ]
Li Yu-Zhu [2 ]
机构：
[1] Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[2] Nanjing Elect Devices Inst, Natl Key Lab Monolith Integrated Circuits & Modul, Nanjing 210016, Peoples R China
[3] TanKeBlue Semicond CO Ltd, Beijing 100190, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 09期
关键词：
REACTOR; DIODES; LAYERS;
D O I：
10.1088/0256-307X/28/9/098101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Homo-epitaxial layers are successfully grown on Si-face 4 degrees off-axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I-V characteristic. This is the first report of Schottky diodes fabricated on 4 degrees off-axis 4H-SiC substrates made in China.
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页数：3
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