Transport properties of free carriers in semiconductors studied by terahertz time-domain magneto-optical ellipsometry

被引：23
作者：
Yatsugi, Kenichi [1 ]
Matsumoto, Naoki [1 ,2 ]
Nagashima, Takeshi [1 ]
Hangyo, Masanori [1 ]
机构：
[1] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan
[2] Murata Mfg Co Ltd, Kyoto 6178555, Japan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 21期
关键词：
OPTICAL-CONSTANTS; EFFECTIVE-MASS; TEMPERATURE; STATE; INAS; GAAS;
D O I：
10.1063/1.3595270
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a terahertz time-domain magneto-optical ellipsometry to deduce the effective mass, scattering time, density, and type (n or p) of free carriers independently. The parameters are derived from diagonal and off-diagonal components of the complex dielectric tensor obtained by measurements of magneto-optical Kerr effects under a magnetic field of 0.46 T using the generalized Drude model. The derivation of these parameters for n-type InAs wafers with different carrier densities is demonstrated. The carrier density dependence of the effective mass agrees well with previously reported experimental results and theoretical calculations that take into account nonparabolicity of conduction bands. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595270]
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