Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

被引：90

作者：

Chang, Y. C. ^{[2
]}

Huang, M. L. ^{[3
]}

Chang, Y. H. ^{[2
]}

Lee, Y. J. ^{[2
]}

Chiu, H. C. ^{[2
]}

Kwo, J. ^{[1
,3
]}

Hong, M. ^{[2
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

MOS; Atomic-layer-deposition (ALD); HfO2; Al2O3; GaN; High k dielectric; FIELD-EFFECT TRANSISTORS; GAN/ALGAN HEMTS; SEMICONDUCTOR; ENHANCEMENT; DIELECTRICS;

D O I：

10.1016/j.mee.2011.03.098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al2O3, HfO2, and composite HfO2/Al2O3 films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO2 and GaN, whereas the absence of an interfacial layer at Al2O3/GaN was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy. The dielectric constants of Al2O3, HfO2, and composite HfO2/Al2O3 calculated from the C-V measurement are 9, 16.5, and 13.8, respectively. The Al2O3 employed as a template in the composite structure has suppressed the interfacial layer formation during the subsequent ALD-HfO2 and effectively reduced the gate leakage current. While the dielectric constant of the composite HfO2/Al2O3 film is lower than that of HfO2, the composite structure provides sharp oxide/GaN interface without interfacial layer, leading to better electrical properties. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1207 / 1210

页数：4

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