Annealing effect on the photoluminescence of Si nanocrystallites thin films

被引：6

作者：

Jeon, KA ^{[1
]}

Kim, JH ^{[1
]}

Choi, JB ^{[1
]}

Han, KB ^{[1
]}

Lee, SY ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2003年 / 23卷 / 6-8期

关键词：

Si nanocrystallites; pulsed laser deposition; annealing effect; quantum confinement effect; defect centers;

D O I：

10.1016/j.msec.2003.09.157

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition (PLD) using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases at the temperature range from 400 to 800 degreesC. Strong violet-indigo photoluminescence has been observed at room temperature (RT) from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures. As the results of PL and high-resolution transmission electron microscope (HRTEM) measurements, we could suggest that the origin of violet-indigo PL from the films was related to the quantum size effect of Si nanocrystallites. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1017 / 1019

页数：3

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