Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering

被引：88

作者：

Li, Changjian ^{[1
,2
]}

Huang, Lisen ^{[3
]}

Li, Tao ^{[4
]}

Lu, Weiming ^{[1
]}

Qiu, Xuepeng ^{[5
]}

Huang, Zhen ^{[1
]}

Liu, Zhiqi ^{[1
]}

Zeng, Shengwei ^{[1
]}

Guo, Rui ^{[1
,3
]}

Zhao, Yonglian ^{[1
]}

Zeng, Kaiyang ^{[4
]}

Coey, Michael ^{[6
]}

Chen, Jingsheng ^{[3
]}

Ariando ^{[1
,7
]}

Venkatesan, T. ^{[1
,2
,5
]}

机构：

[1] Natl Univ Singapore, NUSNNI Nanocore, Singapore 117411, Singapore

[2] Natl Univ Singapore, Grad Sch Integrat Sci & Engn NGS, Singapore 117456, Singapore

[3] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore

[4] Natl Univ Singapore, Dept Mech Engn, Singapore 117575, Singapore

[5] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[6] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[7] Natl Univ Singapore, Dept Phys, Singapore 117571, Singapore

来源：

NANO LETTERS | 2015年 / 15卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

forroelectric tunnel junctions; BeiTiO(3); oxide interface; interface engineering; ELECTRORESISTANCE;

D O I：

10.1021/acs.nanolett.5b00138

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The ability to change states using voltage in ferroelectric tunnel junctions (FTJs) offers a route for lowering the switching energy of memories. Enhanced tunneling electroresistance in FTJ can be achieved by asymmetric electrodes or introducing metal-insulator transition interlayers. However, a fundamental understanding of the role of each interface in a FTJ is lacking and compatibility with integrated circuits has not been explored adequately. Here, we report an incisive study of FTJ performance with varying asymmetry of the electrode/ferroelectric interfaces. Surprisingly high TER (similar to 400%) can be achieved at BaTiO3 layer thicknesses down to two unit cells (similar to 0.8 nm). Further our results prove that band offsets at each interface in the FTJs control the TER ratio. It is found that the off state resistance (ROff) increases much more rapidly with the number of interfaces compared to the on state resistance (ROn). These results are promising for future low energy memories.

引用

页码：2568 / 2573

页数：6

共 27 条

[1] Prediction of electrically induced magnetic reconstruction at the manganite/ferroelectric interface [J].

Burton, J. D. ;

Tsymbal, E. Y. .

PHYSICAL REVIEW B, 2009, 80 (17)

[2]

Chanthbouala A, 2012, NAT NANOTECHNOL, V7, P101, DOI [10.1038/nnano.2011.213, 10.1038/NNANO.2011.213]

[3] Ferroelectric control of magnetization in La1-xSrxMnO3 manganites: A first-principles study [J].

Chen, Hanghui ;

Ismail-Beigi, Sohrab .

PHYSICAL REVIEW B, 2012, 86 (02)

[4] Resistive switching in metal-ferroelectric-metal junctions [J].

Contreras, JR ;

Kohlstedt, H ;

Poppe, U ;

Waser, R ;

Buchal, C ;

Pertsev, NA .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4595-4597

[5] Chemical potential shift and spectral-weight transfer in Pr1-xCaxMnO3 revealed by photoemission spectroscopy [J].

Ebata, K. ;

Wadati, H. ;

Takizawa, M. ;

Fujimori, A. ;

Chikamatsu, A. ;

Kumigashira, H. ;

Oshima, M. ;

Tomioka, Y. ;

Tokura, Y. .

PHYSICAL REVIEW B, 2006, 74 (06)

[6] Ferroelectricity in ultrathin perovskite films [J].

Fong, DD ;

Stephenson, GB ;

Streiffer, SK ;

Eastman, JA ;

Auciello, O ;

Fuoss, PH ;

Thompson, C .

SCIENCE, 2004, 304 (5677) :1650-1653

[7] Tunnel junctions with multiferroic barriers [J].

Gajek, Martin ;

Bibes, Manuel ;

Fusil, Stephane ;

Bouzehouane, Karim ;

Fontcuberta, Josep ;

Barthelemy, Agnes ;

Fert, Albert .

NATURE MATERIALS, 2007, 6 (04) :296-302

[8] Ferroelectric Control of Spin Polarization [J].

Garcia, V. ;

Bibes, M. ;

Bocher, L. ;

Valencia, S. ;

Kronast, F. ;

Crassous, A. ;

Moya, X. ;

Enouz-Vedrenne, S. ;

Gloter, A. ;

Imhoff, D. ;

Deranlot, C. ;

Mathur, N. D. ;

Fusil, S. ;

Bouzehouane, K. ;

Barthelemy, A. .

SCIENCE, 2010, 327 (5969) :1106-1110

[9] Giant tunnel electroresistance for non-destructive readout of ferroelectric states [J].

Garcia, V. ;

Fusil, S. ;

Bouzehouane, K. ;

Enouz-Vedrenne, S. ;

Mathur, N. D. ;

Barthelemy, A. ;

Bibes, M. .

NATURE, 2009, 460 (7251) :81-84

[10] Ferroelectric tunnel junctions for information storage and processing [J].

Garcia, Vincent ;

Bibes, Manuel .

NATURE COMMUNICATIONS, 2014, 5

← 1 2 3 →