共 50 条
- [32] A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect Chin. Phys., 2007, 6 (1757-1763):
- [34] A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect CHINESE PHYSICS, 2007, 16 (06): : 1757 - 1763
- [35] Extraction of Trap Parameters for High-K Gate Stacks PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6, 2008, 16 (05): : 111 - 120
- [37] High-k/Metal Gate Stacks in Gate First and Replacement Gate Schemes 2010 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, 2010, : 256 - 259
- [38] Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 269 - +
- [39] Effect of High-k Material on Gate Threshold Voltage for Double-Gate Tunnel FET APPLIED MECHANICS AND MATERIALS I, PTS 1-3, 2013, 275-277 : 1984 - 1987
- [40] Detection of electron trap generation due to constant voltage stress on high-k gate stacks 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL, 2006, : 169 - +