The role of electron-electron scattering in spin transport

被引：13

作者：

Kamra, Akashdeep ^{[1
]}

Ghosh, Bahniman ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 02期

关键词：

MONTE-CARLO; RELAXATION; CONDUCTION; CARRIERS;

D O I：

10.1063/1.3532042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate spin transport in quasi two dimensional electron gas formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport. (C) 2011 American Institute of Physics. [doi:10.1063/1.3532042]

引用

页数：6

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