Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering

被引：11

作者：

Alarcon-Llado, Esther ^{[1
]}

Bin-Dolmanan, Surani ^{[1
]}

Lin, Vivian Kai Xin ^{[1
]}

Teo, Siew Lang ^{[1
]}

Dadgar, Armin ^{[2
,3
]}

Krost, Alois ^{[2
,3
]}

Tripathy, Sudhiranjan ^{[1
]}

机构：

[1] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[2] AZZURRO Semicond AG, D-39016 Magdeburg, Germany

[3] Otto VonGuericke Univ Magdegurg, Fak Nat Wissensch, Inst Expt Phys, D-39016 Magdeburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 11期

关键词：

JUNCTION TEMPERATURE; GAN; SPECTROSCOPY; TRANSISTORS; DEPENDENCE; SUBSTRATE; SAPPHIRE; PHONONS; SI(111); LEDS;

D O I：

10.1063/1.3505780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on a Raman scattering study of self-heating in InGaN/GaN-based thin film vertical light emitting diode (VLED) on copper successfully transferred from silicon (111). The LED structures grown on bulk Si are transferred to a copper substrate host using electroplating and sacrificial removal of silicon by grinding, lapping and dry etching. The light emission characteristics of such VLEDs are studied by electroluminescence measurements. Due to self-heating at very high injection current, the temperature of the p-side down VLED without encapsulation and packaging increases rapidly and correlates well with the I-V characteristics. The Raman measurements allow probing of temperature profiles when these VLEDs are driven at current up to 1 A. (c) 2010 American Institute of Physics. [doi:10.1063/1.3505780]

引用

页数：5

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