Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films

被引：5

作者：

Liu, F

Zhu, M

Liu, T

机构：

[1] Univ Sci & Technol China, Grad Sch, Beijing 100039, Peoples R China

[2] State Key Lab Mat Chem & Applicat, Beijing 100039, Peoples R China

[3] Inst High Energy Phys, Synchrotron Radiat Lab, Beijing 100039, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

Eu ions; SiO2; photoluminescence; XANES;

D O I：

10.1016/S0921-5107(00)00732-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Eu doped SiO2 thin films, SiO2(Eu), were prepared by implanting Eu ions into thermal growth SiO2 thin films and co-sputtering of SiO2 and Eu2O3. The red light emission (604 nm) at room temperature from as prepared and annealed SiOz(Eu) films was observed, which is corresponding to the D-5(0)-F-7(J) transitions of Eu3+. The blue light emission (443 nm) corresponding to f-d transition of Eu2+ appeared after annealing at high temperature in N-2 accompanied by a decrease in intensity of red light. It indicates the conversion of Eu3+ to Eu2+. The Eu-L-3-edge X-ray absorption near edge structure (XANES) spectra show the doublet peak structure with energy difference of 7 eV, which confirms the conversion of Eu3+ to Eu2+ at high annealing temperature (Ta) in N-2. (C) 2001 Elsevier Science S.A. AII rights reserved.

引用

页码：179 / 181

页数：3

共 9 条

[1] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON [J].