Growth of Directly Transferable In2O3 Nanowire Mats for Transparent Thin-film Transistor Applications

被引:97
作者
Shen, Guozhen [1 ,2 ]
Xu, Jing [1 ,2 ]
Wang, Xianfu [1 ,2 ]
Huang, Hongtao [1 ,2 ]
Chen, Di [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Coll Optoelect Sci & Engn, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
DEVICES; NANOTUBES; DISPLAYS;
D O I
10.1002/adma.201003474
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Peeling off nanowire mats with tweezers? Directly transferable In2O3 nanowire mats are synthesized via a simple laser-ablation chemical vapor deposition method. The mats are used as active channels to make transparent thin-film transistors with high performance.
引用
收藏
页码:771 / +
页数:6
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