Automatic locking of a semiconductor laser at λ≈633 nm on linear absorption iodine transitions
被引:0
作者:
Zarka, A
论文数: 0引用数: 0
h-index: 0
机构:
BIPM, Pavillon Breteuil, Sevres, FranceBIPM, Pavillon Breteuil, Sevres, France
Zarka, A
[1
]
Chartier, JM
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h-index: 0
机构:
BIPM, Pavillon Breteuil, Sevres, FranceBIPM, Pavillon Breteuil, Sevres, France
Chartier, JM
[1
]
Cliche, JF
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h-index: 0
机构:
BIPM, Pavillon Breteuil, Sevres, FranceBIPM, Pavillon Breteuil, Sevres, France
Cliche, JF
[1
]
Tetu, M
论文数: 0引用数: 0
h-index: 0
机构:
BIPM, Pavillon Breteuil, Sevres, FranceBIPM, Pavillon Breteuil, Sevres, France
Tetu, M
[1
]
机构:
[1] BIPM, Pavillon Breteuil, Sevres, France
来源:
1998 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGEST
|
1998年
关键词:
D O I:
10.1109/CPEM.1998.699892
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A 633 nm laser diode was frequency tuned by its injection current and was automatically locked on specific linear absorption lines of iodine by using a digital line identification system. The setup provides a low cost optical frequency reference that is precise enough to replace He-Ne references in many metrological applications.