Study Of Semiconducting Parameters In Dark As Well As In Presence Of Light For Se90X10 (X=Ag,In) Thin

被引：0

作者：

Singh, N. K. ^{[1
]}

Kumar, Anjani ^{[2
]}

Kumar, D. ^{[3
]}

Shukla, S. ^{[1
]}

机构：

[1] Chhatrapati Shahu Ji Maharaj Univ, UIET, Dept Phys, Kanpur, Uttar Pradesh, India

[2] Harcourt Butler Technol Inst, Dept Phys, Kanpur, Uttar Pradesh, India

[3] JSS Acad Tech Educ, Dept Phys, Noida, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2015 | 2016年 / 1731卷

关键词：

Thin films; conductivity; pre-exponential factor; Meyer - Neldel rule; MEYER-NELDEL RULE; FILMS; ALLOYS; FIELD;

D O I：

10.1063/1.4947866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present paper reports the study of semiconducting parameters (activation energy and pre-exponential factor) in glassy samples of Se90X10 (X=Ag, In) in dark as well as in presence of light. Temperature dependence of dark and photo-conductivity is measured in amorphous thin films in the temperature range 300-378 K and in the intensity range 2000-18000 Lux. A straight line between ln sigma(0) and Delta E indicates the presence of Meyer - Neldel (MN) rule in dark as well as in presence of light. Linear dependence of ln(sigma(0)) on Delta E in case of amorphous material indicate that the conduction band tails a finite energy distance towards the valence band and a Fermi level which is controlled by fixed dominant hole levels deeper in the gap.

引用

页数：3

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