An investigation the rate of Si self-interstitial annihilation at dislocations

被引：6

作者：

Mariani, G ^{[1
]}

Sirotkin, VV ^{[1
]}

Pichaud, B ^{[1
]}

Yakimov, EB ^{[1
]}

Zaitsev, SI ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST MICROELECTR TECHNOL,CHERNOGOLOVKA 142432,RUSSIA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 31期

关键词：

SILICON; DIFFUSION; GOLD; SINKS;

D O I：

10.1088/0953-8984/8/31/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two different approaches are proposed for calculating the dislocation sink efficiency gamma for silicon self-interstitials: a numerical calculation and an analytical approach, the results of which are very close. The differences between the calculated and measured values of gamma is interpreted in terms of the effective dislocation density, and this new hypothesis is introduced in the analytical model leading in a first approximation to a linear relationship between gamma acid the proportion of mobile dislocations (via a climbing process).

引用

页码：5685 / 5690

页数：6

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