An investigation the rate of Si self-interstitial annihilation at dislocations

Two different approaches are proposed for calculating the dislocation sink efficiency gamma for silicon self-interstitials: a numerical calculation and an analytical approach, the results of which are very close. The differences between the calculated and measured values of gamma is interpreted in terms of the effective dislocation density, and this new hypothesis is introduced in the analytical model leading in a first approximation to a linear relationship between gamma acid the proportion of mobile dislocations (via a climbing process).