Current density limitations of spin valves

被引：5

作者：

Gafron, TJ ^{[1
]}

Burkett, SL

Russek, SE

机构：

[1] Boise State Univ, Dept Elect Engn, Boise, ID 83725 USA

[2] Natl Inst Stand & Technol, Div Electromagnet Technol, Boulder, CO 80303 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

基金：

美国国家科学基金会;

关键词：

current density; lifetime; magnetoresistance; spin valves;

D O I：

10.1109/20.908532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As spin valve technology evolves, understanding the limitations and design constraints is a critical consideration. Choosing the correct materials combination, aspect ratio and size depends upon careful device characterization. Analysis of spin valves in this study shows that device lifetime and durability are determined by allowable current densities and the internal temperatures that result. Parameters such as maximum sustained current and device degradation can be predicted and calculated, allowing the designer to choose the correct parameters for a specific application.

引用

页码：2611 / 2613

页数：3

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