Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs/AlGaAs multiple quantum wells

被引：1

作者：

Yee, KJ ^{[1
]}

Lim, YS

Dekorsy, T

Kim, DS

机构：

[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

[2] Konkuk Univ, Dept Appl Phys, Chungju 380701, Chungbook, South Korea

[3] FZ Rossendorf, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.86.1630

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that coherent optical phonons in GaAs multiple quantum wells are generated in a completely different way as compared to bulk GaAs. Unlike in bulk GaAs where the ultrafast screening of electric fields by photogenerated charge carriers is known to be dominant, three distinctive generation mechanisms contribute simultaneously in multiple quantum wells. The interplay between impulsive Raman scattering. forbidden Raman scattering, and screening of surface electric fields, whose relative strengths are determined by laser intensity, detuning from the exciton resonance, and the barrier width, generates a rich variety of new phenomena.

引用

页码：1630 / 1633

页数：4

共 23 条

[1] Coherent zone-folded longitudinal acoustic phonons in semiconductor superlattices:: Excitation and detection [J].