Design and Implementation of an 11-bit 50-MS/s Split SAR ADC in 65 nm CMOS

被引:0
作者
Anh Trong Huynh [1 ]
Hoa Thai Duong [2 ]
Hoang Viet Le [1 ]
Skafidas, Efstratios [1 ,2 ]
机构
[1] Univ Melbourne, Natl ICT Australia, Melbourne, Vic 3010, Australia
[2] Univ Melbourne, Dept Elect & Elect Engn, Melbourne, Vic 3010, Australia
来源
2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2014年
基金
澳大利亚研究理事会;
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and implementation of an 11-bit 50-MS/s split successive approximation register (SAR) analog-to-digital converter (ADC) that features a comparator with input-referred offset cancellation, an improved split capacitor digital-to-analog converter (CDAC), and a CDAC mismatch calibrator. In order to reduce the input loading capacitance of the split CDAC, an extra unit capacitor is added to the most significant bit (MSB) array and the input is only sampled onto the bottom plates of the MSB array. Capacitance mismatch between the lowest-bit capacitor of the MSB array and the capacitors of the least significant bit (LSB) array is digitally calibrated. In the design of the comparator, kickback noise is suppressed by an intermediate stage. A switch is inserted between the regeneration nodes in order to rapidly equate their voltages before regeneration phase kicks start. An input-referred offset cancellation circuit, which adjusts the body voltages of the input triple-well transistors, was also developed. The ADC was designed and fabricated in a 65 nm complementary metal oxide semiconductor (CMOS) process. The chip consumes 2.48 mW and achieves a 58.95-dB signal to noise and distortion ratio (SNDR) at 50-MS/s sampling rate. Its figure of merit (FOM) is 95 fJ/conversion-step.
引用
收藏
页码:305 / 308
页数:4
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