Distinguishing dislocation densities in intrinsic layers of pin diamond diodes using two photon-excited photoluminescence imaging

被引：4

作者：

Honbu, Tatsuya ^{[1
,2
]}

Takeuchi, Daisuke ^{[1
,2
]}

Ichikawa, Kimiyoshi ^{[3
]}

Ohmagari, Shinya ^{[1
]}

Teraji, Tokuyuki ^{[3
]}

Ogura, Masahiko ^{[1
]}

Kato, Hiromitsu ^{[1
]}

Makino, Toshiharu ^{[1
]}

Shoji, Ichiro ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Chuo Univ, Fac Sci & Engn, Dept Elect Elect & Commun Engn, Bunkyo Ku, 1-13-27 Kasuga, Tokyo 1128551, Japan

[3] Natl Inst Mat Sci NIMS, Opt & Elect Mat Unit, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

关键词：

Cathodoluminescence; Defect characterization; Diamond film; Electron emission; Pindiode; Two-photon excitation photoluminescence; NEGATIVE-ELECTRON-AFFINITY; CONDUCTION; SURFACES;

D O I：

10.1016/j.diamond.2021.108463

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The density of dislocations that occur in the intrinsic (i-) layer of a pin diamond diode was estimated from twophoton excitation photoluminescence (2PPL) imaging. Results elucidated data obtained from device characteristic measurements and cathodoluminescence (CL). Generation and diffusion of free carriers for deep-level emission in the i-layer have no effect on emission images observed using the 2PPL method. Therefore, to evaluate the pin diode structure, the influence of free carrier propagation on the adjacent layer can be avoided. However, this effect cannot be ignored when using CL. These findings are expected to be important for assessing diamond device performance.

引用

页数：7

共 21 条

[1] PHOTOELECTRIC-EMISSION FROM NEGATIVE-ELECTRON-AFFINITY DIAMOND(111) SURFACES - EXCITON BREAKUP VERSUS CONDUCTION-BAND EMISSION [J].